Pressure Sensors Based on Field-Effect Transistors with Giant Electromechanical Coupling Induced by

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户:chen1052333209
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Physically responsive field-effect transistors (physi-FETs),which are sensitive to physical stimuli,have been studied for decades.
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