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以ZnO:Al(2%Al2O3,质量分数)为靶材,用射频磁控溅射在玻璃衬底上制备ZnO:Al薄膜,分析了各沉积参数对薄膜光电性能的影响。结果表明:溅射功率对ZnO:Al的透过率影响最大,其次是反应腔室压力,而衬底温度对透过率几乎没有影响。ZnO:Al的电阻率主要取决于衬底温度和溅射功率。综合考虑透过率和电阻率,确定了背反ZnO:Al的最佳沉积参数(衬底温度为200℃,溅射功率为200W,反应腔室压力为0.6Pa),得到了透过率大于85%,电阻率最小为7.6×10-4Ωcm的ZnO:Al薄膜。制备了ZnO:Al/Ag/ss(stainless steel)背反电极,并将其用于非晶硅太阳能电池。与无背反的不锈钢衬底上的电池相比,非晶硅太阳能电池短路电流密度增加了16%。
ZnO: Al (2% Al2O3, mass fraction) was used as a target to fabricate ZnO: Al films on glass substrate by RF magnetron sputtering. The influence of deposition parameters on the photoelectric properties was analyzed. The results show that the sputtering power has the greatest effect on the transmittance of ZnO: Al, followed by the reaction chamber pressure, while the substrate temperature has almost no effect on the transmittance. The resistivity of ZnO: Al depends mainly on the substrate temperature and sputtering power. Considering the transmissivity and resistivity, the optimal deposition parameters of back-side ZnO: Al (the substrate temperature is 200 ℃, the sputtering power is 200W, the pressure in the reaction chamber is 0.6Pa) are determined, and the transmittance of more than 85 %, A minimum resistivity of 7.6 × 10 -4 Ωcm ZnO: Al film. A ZnO: Al / Ag / SS (stainless steel) back electrode was prepared and used for amorphous silicon solar cells. The amorphous silicon solar cells have a short-circuit current density increase of 16% compared to non-inverting stainless steel substrates.