Recently,Ⅲ-nitride materials systems have attracted much attention as the active region for light emitting diodes(LEDs)due to their good light-emitting efficacy.
Thin films of Cu3NMx(M=Cu,Ag,Au)compounds were grown by magnetron sputtering of metal targets in nitrogen atmosphere,aiming at obtaining single solids of nearly constant electrical resistance in a lar
Topological insulators(TIs),a new state of quantum matter,have recently attracted significant attention,both for their fundamental research interest and for their potential device applications [1–2].
In recent years,wurtzite GaN and related Ⅲ–V compound semiconductors have attracted considerable attention in high-brightness light-emitting diodes(LEDs)and laser diodes(LDs)emitting from the green to