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Graphene Field-effect Transistor

来源 :2014中国国际石墨烯创新大会 | 被引量 : 0次 | 上传用户：lhasrq

【摘 要】

：

　　Since the exfoliation of graphene from HOPG,the properties of graphene have been intensively investigated.[1] The mobility of suspended graphene can reach a

【作 者】

：

Zhi Jin Peng Ma Dayong Zhang Jingyuan Shi Xuanyun Wang Songang Peng Shaoqing Wang Mei Li 

【机 构】

：

InstituteofMicroelectronics,CAS,China

【出 处】

：

2014中国国际石墨烯创新大会

【发表日期】

：

2014年9期

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论文部分内容阅读

　　Since the exfoliation of graphene from HOPG,the properties of graphene have been intensively investigated.[1] The mobility of suspended graphene can reach as high as 105 cm2/Vs.The extremely high mobility is very attractive for radio-frequency (RF)application.

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