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5. Characteristic Features of Silicon Junctionless Nanowire Transistors Fabricated by Femtosecond Laser

Characteristic Features of Silicon Junctionless Nanowire Transistors Fabricated by Femtosecond Laser

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户：yywachself

【摘 要】

：

Single n-channel junctionless nanowire transistors(JNT)are fabricated on silicon-on-insulator substrate by the two-photon femtosecond laser lithography.

【作 者】

：

Hao Wang Weihua Han Liuhong Ma Xiaoming Li Fuhua Yang 

【机 构】

：

Engineering Research Center for Semiconductor Integration Technology,Institute of Semiconductors,Chi

【出 处】

：

The 6th International Conference on Nanoscience and Technolo

【发表日期】

：

2015年5期

【关键词】

：

junctionless nanowire transistor femtosecond laser low temperature drain current 

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　　Single n-channel junctionless nanowire transistors(JNT)are fabricated on silicon-on-insulator substrate by the two-photon femtosecond laser lithography.

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