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5. Anodic Aluminum Oxide Barrier Layer Etching on Silicon Substrate by using Cl2/BCl3 Neutral Beam

Anodic Aluminum Oxide Barrier Layer Etching on Silicon Substrate by using Cl2/BCl3 Neutral Beam

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：yang97yang

【摘 要】

：

The anodic aluminum oxide (AAO) is used as the solid mask,due to the strong bonding of Al2O3,it shows superior mechanical properties compared to other porous mask materials.

【作 者】

：

C.K.Kim K.S.Min J.S.Oh G.Y.Yeom 

【机 构】

：

Department of Advanced Materials Science & Engineering, Sungkyunkwan University

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

AAO Barrier Layer Neutral Beam Etching Cl2/BCl3 

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The anodic aluminum oxide (AAO) is used as the solid mask,due to the strong bonding of Al2O3,it shows superior mechanical properties compared to other porous mask materials.

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