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Organic-inorganic hybrid perovskite materials have been demonstrated to be highly performed light absorbers for high efficient perovskite solar cells.In addition to solar cells applications,the materials have also demonstrated versatile functionalities in a number of fields.Herein,we give the first demonstration of remarkable resistive switching behaviour in organic-inorganic hybrid perovskite materials(CH3NH3PbI3-xClx),which can be applicable in the resistive random access memory(RRAM)devices.