By using the transfer matrix and trace map approaches,we investigate the electronic properties in graphene with Thue-Morse quasi-periodic potentials.In this Thue-Morse graphene superlattice the energy
High quality ZnO films are desirable for applications in optoelectronics.In the growth of ZnO thin films on the hexagonal substrates such as sapphire (0001),a buffer layer of MgO (111) on the substrat
Ⅲ-Nitride semiconductor is a fantastic family system,composed of binary (AlN,GaN,InN),Ternary (InAlN,AlGaN and InGaN) and quaternary (InAlGaN) materials.Due to their excellent physical properties,the
多铁(Multiferroics)材料近年来引起了广泛的关注——"Areas to Watch",Science 318,1848 (2007).这类材料同时具有两种或两种以上的铁序(铁电序、铁磁/反铁磁序和铁弹序),并且不同铁序之间具有耦合效应,从而产生一些新的物理现象,相关研究丰富了人们对不同铁序的起源和相互作用的认识[1].