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根据FET沟道区电场分布的特点,用电子速场特性的分段近似提出了一种新的GaAs MESFET直流解析模型。本文提出的模型可用以计算高夹断电压和低夹断电压GaAs MESFET的直流特性,比完全速度饱和模型及平方律模型更为精确。
According to the characteristics of electric field distribution in FET channel region, a new direct current analytical model of GaAs MESFET is proposed based on the subsection approximation of electron field characteristics. The proposed model can be used to calculate the DC characteristics of GaAs MESFETs with high pinch-off voltage and low pinch-off voltage, which is more accurate than the full-speed saturation and square-law models.