利用退火技术 ,实现了在低温 Ga As外延层上 In As量子点的生长 .透射电镜 (TEM)研究表明 ,低温 Ga As外延层上生长的 In As量子点比通常生长的 In As量子点明显变小 ,且密度变大 ,认为是由于低温 Ga As中的点缺陷以及 As沉淀引起的 :点缺陷释放了部分弹性能 ,使得量子点变小 ,而 As沉淀可能是量子点密度变大的原因 .在光致发光谱 (PL )上 ,退火低温外延层上生长的量子点的发光峰能量较高 ,且半高宽变窄 The growth of InAs quantum dots on the GaAs epitaxial layer at low temperature was achieved by annealing technique.Transmission electron microscopy (TEM) studies show that the In As quantum dots grown on the GaAs epitaxial layer at low temperature are obviously changed from the InAs quantum dots grown normally Small, and increased in density, believed to be due to point defects in GaAs at low temperatures and As precipitation: point defects release some of the elastic energy, making quantum dots smaller, and As precipitation may be the reason for the increased quantum dot density. On the photoluminescence spectrum (PL), the quantum dots grown on the annealed low-temperature epitaxial layer have higher luminescence peak energy and narrowed the FWHM