该敏感元件采用离子束溅射淀积成膜技术,优于国内外广泛采用的真空蒸发、电子束蒸发和磁控溅射等传统工艺,使介质隔离层绝缘性达10MΩ/100V.DC,桥臂电阻值高达2～10kΩ,膜层均匀,成膜成品率高达75％。该敏感元件具有精度高、零点漂移小、稳定性及动态特性好 The sensitive element is deposited by ion beam sputtering deposition technology, better than the widespread use of vacuum evaporation at home and abroad, electron beam evaporation and magnetron sputtering and other traditional processes, the dielectric isolation layer insulation up to 10MΩ / 100V.DC, Bridge Arm resistance value of up to 2 ~ 10kΩ, uniform film, film yield as high as 75%. The sensitive components with high precision, zero drift is small, good stability and dynamic characteristics