不久前在日本京都举行的VLSI技术研讨会上提交的研究结果显示,采用超薄衬底的SOI晶圆和22纳米工艺制造的器件和采用体硅晶圆、22纳米工艺制造的器件相比,性能的提高达到了25%。包括MEMC、SEH、Soitec等在内的几家主要SOI晶圆供应商表示,他们已经为超薄衬底的SOI晶圆的规模化生产做好 The recent research presented at the VLSI Technology Symposium in Kyoto, Japan, shows that devices manufactured using ultrathin-substrate SOI wafers and 22-nm processes, as compared to devices fabricated using bulk silicon wafers and 22-nm processes, Performance increased by 25%. Several major SOI wafer suppliers, including MEMC, SEH, Soitec and others, said they have done a good job of mass production of ultrathin SOI wafers