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通过Ｘ光衍射图分析，确认了较低温度下ＣＶＤ法生长的非掺杂ＳｎＯ２晶膜含有较多的偏离ＳｎＯ２配位的晶体成份，从而定性地解释了该晶膜具有较高的气体敏感度的现象。
By X-ray diffraction analysis, it was confirmed that the non-doped SnO2 crystal film grown by CVD method at lower temperature contains more crystal components deviating from SnO2 coordination, thus qualitatively explaining that the crystal film has high gas sensitivity The phenomenon.