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设计了一种超高真空使用的低电流过渡金属蒸发源 ,它能产生高纯金属原子束 ,且具有一定的寿命。该蒸发源是将过渡金属Co,Ni或Cr电镀到一个由W丝弯成的U形加热器上构成的。装入超高真空中 ,利用W丝自身的电阻加热 ,去气后 ,可获得数小时的清洁蒸发。实验结果表明 ,在离蒸发源约 5cm处 ,其淀积速率最高可达 1 0nm/min ,总的淀积厚度超过 5 0 0nm ,而且Auger分析结果显示 ,在超高真空中淀积的上述几种过渡金属薄膜 ,其纯度相当高 ,杂质含量均小于仪器的检测灵敏度。本文详细介绍了这种过渡金属蒸发源的制作技术及性能
A low-current transition metal evaporation source designed for ultrahigh vacuum was designed to produce a high-purity metal atomic beam with a long lifetime. The evaporation source is formed by plating the transition metal Co, Ni or Cr onto a U-shaped heater bent from a W wire. Into the ultra-high vacuum, the use of W wire resistance heating itself, to the gas, you can get a few hours of clean evaporation. Experimental results show that at a distance of about 5 cm from the evaporation source, the deposition rate can reach as high as 10 nm / min and the total deposition thickness exceeds 500 nm. The results of Auger analysis show that the above-mentioned deposits The kind of transition metal film, its purity is very high, the impurity content is less than the detection sensitivity of the instrument. This paper describes in detail the production technology and properties of this transition metal evaporation source