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研究了恒压应力下超薄栅氧化层n型金属-氧化物-半导体场效应晶体管(n-MOSFET)软击穿后的导电机制.发现在一定的栅电压Vg范围内,软击穿后的栅电流Ig符合Fowler-Nordheim隧穿公式,但室温下隧穿势垒b的平均值仅为0·936eV,远小于Si/SiO2界面的势垒高度3·15eV.研究表明,软击穿后,处于Si/SiO2界面量子化能级上的电子不隧穿到氧化层的导带,而是隧穿到氧化层内的缺陷带上.b与缺陷带能级和电子所处的量子能级相关;高温下,激发态电子对隧穿电流贡献的增大导致b逐渐降低.
The conduction mechanism of soft breakdown of n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET) under constant voltage stress was investigated. It was found that after a soft breakdown The gate current Ig is in accordance with the Fowler-Nordheim tunneling formula, but the average value of the tunneling barrier b at room temperature is only 0. 936eV which is much lower than the barrier height of the Si / SiO2 interface by 3.15eV. , The electron at the quantization level of the Si / SiO2 interface does not tunnel to the conduction band of the oxide layer but tunnels into the defect band within the oxide layer.b The level of the defect band and the quantum energy at which the electron is located Level; under high temperature, the excited state electron contribution to the tunneling current lead to a gradual decrease in b.