论文部分内容阅读
本文主要讨论用于功率电子电路中的快速开关GaN器件的技术途径。首先,概述对于在SiC和Si衬底上生长的器件,用于提高击穿电压的最先进技术。然后将这些技术与不同偏压下的动态开关特性联系起来。动态开关特性仍然落后于类似的竞争器件,尤其是如果考虑高偏压的开关特性时。开关特性一般用所谓的动态导通电阻表示。它与一些工艺参数的关系极大,这些参数如外延层的设计、缓冲层晶体品质、钝化层,最后,但并不是不重要的是横向器件设计(如场电极的布置)。说明了所有这些影响因素之间的平衡,及其与GaN高压开关器件现状的关系。
This article focuses on the technical approaches to fast switching GaN devices used in power electronics. First, an overview of the most advanced techniques for increasing the breakdown voltage for devices grown on SiC and Si substrates. These techniques are then linked to dynamic switching characteristics at different bias voltages. Dynamic switching characteristics still lag behind similar competing devices, especially if high-bias switching characteristics are taken into account. Switch characteristics generally use the so-called dynamic on-resistance. It has a great relationship with some process parameters such as the design of the epitaxial layer, the crystal quality of the buffer layer, the passivation layer, and finally, but not least, the lateral device design such as the layout of the field electrodes. The balance between all of these influencing factors is illustrated, and their relationship to the current state of GaN high-voltage switching devices.