论文部分内容阅读
采用离子注入方法制作了一种新型平面共振隧穿二极管(RTD),通过离子注入将器件之间进行隔离,避免了传统台面型RTD中采用的台面刻蚀所带来的一些缺点,并且表现出良好的I-V特性,峰谷电流比为3.4.通过该方法制作的RTD将更有利于RTD的平面集成.
A new planar resonant tunneling diode (RTD) was fabricated by ion implantation, which separated the devices by ion implantation, avoiding some of the disadvantages of the mesa etching used in traditional mesa RTDs. Good IV characteristics, the peak to valley current ratio of 3.4. RTD produced by this method will be more conducive to the integration of RTD plane.