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据《IEEE Transactions on Electron Devices》1993,40:(8)报道:美国伊利诺斯大学设计研制了0.85μm用于光互连的单片集成光电接收机。这种结构的接收机采用InGaAs/GaAs调制掺杂场效应晶体管(MODFET)与金属-半导体-金属(MSM)光电探测器进行集成。ft=90Hz的0.25μm MODFET用于二级互阻抗放大器。通过使用氮化硅钝化层或Al-
According to “IEEE Transactions on Electron Devices” 1993, 40: (8) Report: The University of Illinois at Urbana-Champaign designed and fabricated a monolithic integrated optoelectronic receiver for optical interconnects at 0.85μm. The receiver of this kind of structure adopts InGaAs / GaAs modulation doped field effect transistor (MODFET) and metal - semiconductor - metal (MSM) Photodetector to integrate. A 0.25 μm MODFET with ft = 90 Hz is used for a two-stage transimpedance amplifier. By using a silicon nitride passivation layer or Al-