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基于Slivaco公司的TCAD软件构建一种新型量子点发光器件,以GaN基底作为电流传输层,在InGaN量子阱中植入InN量子点,并对该器件的电致发光特性进行了仿真.得到了该器件的伏安特性曲线、电致发光光谱曲线,以及量子点尺寸对其发光光谱的影响.仿真结果表明,在外加电压超过3.2V时,发光层的电子和空穴会产生强烈的复合发光;从0.1~2nm改变量子点的尺寸,发射峰从461nm移至481nm,红移了20nm,从2~10nm改变量子点尺寸,光谱基本没有变化.
Based on Slivaco’s TCAD software, a new kind of quantum dot light-emitting device was constructed. InGaN quantum wells were implanted with InN quantum dots by using GaN substrate as the current transport layer, and the electroluminescent properties of the devices were simulated. The device’s voltammetric characteristic curve, the electroluminescence spectrum curve and the quantum dot size on its luminescence spectrum.The simulation results show that when the applied voltage exceeds 3.2V, the electron and the hole of the light-emitting layer will produce strong recombination luminescence; The size of the quantum dots was changed from 0.1 ~ 2nm. The emission peak was shifted from 461nm to 481nm, red shifted by 20nm, and the quantum dot size was changed from 2 ~ 10nm.