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使用高阻 Si材料 ,通过氧化、光刻、注入和退火工艺技术研制粒子探测器—— PIN二极管 .采取 HCl氧化、慢降温等工艺措施可减小 PIN二极管的暗电流 (反向电流 ) ,这对于提高器件性能起到了关键作用 .电压为 - 5 V时 ,探测器的暗电流可达 n A/ cm2 量级 .讨论了器件暗电流与少子寿命的关系
Using high resistance Si material, we developed the particle detector - PIN diode through oxidation, photolithography, implantation and annealing process. The adoption of HCl oxidation and slow cooling can reduce the dark current (reverse current) of the PIN diode. Which plays a key role in improving the performance of the device.The dark current of the detector can be up to n A / cm2 at-5 V. The relationship between dark current and low lifetime of the device is discussed