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对三元混晶纤锌矿AlN/AlxGa1-xN/AlN量子阱,通过数值自洽求解薛定谔方程和泊松方程,获得二维电子气中电子的本征态和本征能级.利用雷-丁平衡方程,讨论该体系中界面光学声子对电子迁移率的影响.在计算中,对AlxGa1-xN中的体纵声子采用修正的无序元素等位移(MREI)模型,横光学声子则分别采用线性拟合(LF)和二次多项式拟合(QMF)方法,计算获得界面声子对电子的散射作用.结果表明,用LF方法获得的电子迁移率高于用QMF方法计算的值.随着Al组分的增加,两种方法之值均逐渐单调增加,且变化趋势类似.在适当的Al组分时,两种方法得到的电子迁移率都存在极值点.
For the AlN / AlxGa1-xN / AlN quantum well of ternary mixed wurtzite, the eigenstates and eigenstates of the electrons in the two-dimensional electron gas are obtained by solving the Schrödinger equation and the Poisson’s equation by self-consistent numerical method. Equilibrium equations and discuss the influence of the interface optical phonon on the electron mobility in this system. In the calculation, the modified MLEI model is applied to the bulk longitudinal phonon in AlxGa1-xN, while the transverse optical phonon Scattering effects of interface phonons on electrons were calculated by linear fit (LF) and quadratic polynomial fitting (QMF) respectively. The results show that the electron mobility obtained by LF method is higher than that calculated by QMF method. With the increase of Al composition, the values of both methods increase monotonically with similar trend, and the electron mobility obtained by the two methods has the extremum point in the proper Al composition.