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本文介绍高功能密度双极型集成电路的一种新的设计概念。基本的抢电流注入逻辑(Current Hogging Injection Logic(GHIL))门由一个横向的中间收集极结构组成。其中最后一个收集极同时构成反相运用的纵向输出晶体管的基区。于是,CHIL门可以看做带有功能集成输出晶体管的抢电流逻辑(Current Hogging Logic(CHL))门;或者可以看做带有控制注入的集成注入逻辑(Integrated Injection Logic(I~2L))反相器。本文将讨论基本的CHIL门的直流和脉冲测试结果,并给出适合于计算机辅助设计(Computer-Aided Design (CAD))的简单电路模型的计算结果。CHIL的静态抗扰度将与CHL和I~2L进行比较。CHIL电路很适合于大规模集成(LSI),而且在工艺上与用标准隐埋收集极(Standard Buried Collector(SBC))工艺制造的所有其它电路是相容的。
This article describes a new design concept for high-performance density bipolar integrated circuits. The basic Current Hogging Injection Logic (GHIL) gate consists of a lateral, intermediate collector structure. The last of these collectors simultaneously forms the base of the vertical output transistor used in reverse phase. The CHIL gate can then be viewed as a Current Hogging Logic (CHL) gate with a functionally integrated output transistor or as an integrated injection logic (I ~ 2L) with control injection Phase device. This article will discuss the DC and Pulse test results for a basic CHIL gate and give results for a simple circuit model suitable for Computer-Aided Design (CAD). The static immunity of CHIL will be compared with CHL and I ~ 2L. The CHIL circuit is well-suited for large-scale integration (LSI) and is technically compatible with all other circuits fabricated using the standard Buried Collector (SBC) process.