论文部分内容阅读
在电荷泵技术的基础上 ,提出了一种新的方法用于分离和确定氧化层陷阱电荷和界面陷阱电荷对 p MOS器件热载流子应力下的阈值电压退化的作用 ,并且这种方法得到了实验的验证 .结果表明对于 p MOS器件退化存在三种机制 :电子陷阱俘获、空穴陷阱俘获和界面陷阱产生 .需要注意的是界面陷阱产生仍然是 p MOS器件热载流子退化的主要机制 ,不过氧化层陷阱电荷的作用也不可忽视 .
Based on the charge-pump technique, a new method is proposed for the separation and determination of the effect of oxide trap charge and interface trap charge on threshold voltage degradation under hot carrier stress in p-MOS devices, and this method yields The experimental results show that there are three mechanisms for the degeneration of p-MOS devices: electron trap capture, hole trap capture and interface trap generation.It should be noted that the generation of interface traps is still the main mechanism of hot carrier degeneration in p MOS devices , But the role of oxide trap charge can not be ignored.