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主要介绍探测器级特高阻区熔硅单晶的高精度微量中子嬗变掺杂技术。技术的关键在于掺杂精度的精确控制。例如从理论计算和实验结果对ρ_0值提出合理要求;辐照孔道的选择和辐照装置的改进;掺杂系数K值的调整;硅单晶样品的模拟试验;辐照时间所严格控制;辐射损伤及其消除的机理等研究工作。所研制的N型(10～100)kΩ·cm NTD FZ Si均匀性好,少子寿命高、晶体纯度高。
This paper mainly introduces the high-precision micro-neutron transmutation doping technology of detector-grade ultra-high resistance zone fused silicon single crystal. The key to technology lies in the precise control of doping accuracy. For example, from the theoretical calculations and experimental results of ρ_0 value reasonable request; the choice of irradiation channels and irradiation device improvements; doping coefficient K value adjustment; silicon single crystal sample simulation test; strict control of irradiation time; radiation Damage and the mechanism of its elimination and other research work. The developed N-type (10 ~ 100) kΩ · cm NTD FZ Si has good uniformity, high life of minority carriers and high crystal purity.