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Ge/Si吸收区-电荷区-倍增区分离(SACM)结构的APD作为一种新型光电探测器已成为硅基APD器件研究的重点。对SACM Ge/Si型APD器件的基本结构及其主要特性参数,包括量子效率、响应度、暗电流等进行了理论分析及仿真验证。实验结果表明:在给定的器件参数条件下,所设计的APD器件的雪崩击穿电压为25.7 V,最大内部量子效率为91%,单位增益下响应度峰值为0.55 A/W,在750~1 500 nm范围内具有较高响应度,其峰值波长为1 050 nm;在高偏压以及高光照强度情况下,倍增区发生空间电荷效应从而导致增益降低。
As a new type of photodetector, APD with Ge / Si absorption-charge-multiplier separation (SACM) structure has been the focus of silicon-based APD devices. The basic structure of SACM Ge / Si APD device and its main characteristic parameters, including quantum efficiency, responsivity, dark current and so on are analyzed theoretically and verified by simulation. The experimental results show that the APD device has avalanche breakdown voltage of 25.7 V, maximum internal quantum efficiency of 91% and peak response of 0.55 A / W at unity gain under the given device parameters. 1 500 nm range has a high responsivity, the peak wavelength of 1 050 nm; in the high bias and high light intensity, the multiplication zone space charge effect, resulting in reduced gain.