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本文利用具有氮氧化物栅介质的ＮＭＯＳ、ＰＭＯＳ和ＣＭＯＳ集成电路研究氮氧化物栅的抗γ总剂量性能，结果表明氮氧化物多层栅介质有比纯ＳｉＯ２更好的抗辐射性能。
In this paper, we use the NMOS, PMOS and CMOS integrated circuits with oxynitride gate dielectric to study the total γ-dose performance of the oxynitride gate. The results show that the oxynitride multilayer gate dielectric has better radiation resistance than pure SiO2.