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本文论述了在720℃～750℃的温度下,Zn在Ga(1-x)Al_xAs,GaAs中的扩散。研究了结深x_1,随片子表面Al组份x值的变化规律。实验表明在同一扩散条件下,Ga_(1-x)Al_xAs与GaAs两种材料的结深xj并不相同。在此基础上获得了Al组份x=0.34的最佳扩散条件。
This article discusses the diffusion of Zn in Ga (1-x) Al_xAs, GaAs at a temperature of 720 ° C to 750 ° C. The change rule of the x value of the Al component at the junction depth x_1 was studied. Experiments show that under the same diffusion conditions, the junction depth xj of Ga_ (1-x) Al_xAs and GaAs are not the same. Based on this, the optimal diffusion condition of Al component x = 0.34 was obtained.