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引言金属—硅肖特基势垒二极管结构的内光电发射效应,早已被人们用来探测波长比硅的基本吸收限还要长的红外辐射。尽管这一结构的量子效率低(典型值为0.1%),但是适
Introduction The internal photoluminescence of metal-silicon Schottky barrier diode structures has long been used to detect infrared radiation longer than the basic absorption of silicon. Although this structure has a low quantum efficiency (typically 0.1%), it is suitable