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基于二氧化钒在约68℃出现的半导体到金属的可逆相变,伴随有电学和光学特性的改变。因为相变机制的复杂性,很难从理论上推导出相变前后光学常数随波长和温度变化的解析表达式。研究了二氧化钒薄膜的折射率和消光系数的色散规律,借助于Sellmeier色散模型通过数值拟合,得出了二氧化钒变温的光学常数色散表达式。通过薄膜矩阵理论计算,获得了在不同温度和波长条件下的薄膜光学透射率和反射率。采用磁控溅射方法分别在玻璃、蓝宝石和二氧化硅衬底上制备了不同厚度的二氧化钒薄膜,测量了这些薄膜的光学透射率和反射率,结果表明,实验曲线与计算模拟曲线符合得很好。
The reversible phase change of semiconductor to metal based on the presence of vanadium dioxide at about 68 ° C is accompanied by changes in electrical and optical properties. Because of the complexity of the phase transition mechanism, it is difficult to theoretically deduce the analytical expression of optical constants with wavelength and temperature before and after phase transition. The dispersion law of refractive index and extinction coefficient of vanadium dioxide thin film was studied. By means of Sellmeier dispersion model, the optical constant dispersion of vanadium dioxide was obtained by numerical fitting. The film optical transmittance and reflectance under different temperature and wavelength were obtained by the theory of thin film matrix. Different thicknesses of vanadium dioxide films were prepared on glass, sapphire and silicon dioxide substrates by magnetron sputtering. The optical transmittance and reflectance of these films were measured. The results show that the experimental curves are consistent with the calculated simulation curves Very well.