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研制了高速高分辨率CCD线阵摄象器件TCD105C(3,648位)和TCD103C(2,592位)。这类器件由于芯片尺寸小,光敏元是高密度集成在一起的。采用P阱结构可以防止因高密度化引起光敏元之问信号隔离的变坏,因而在MTF中可得到70%(尼奎斯特极限)的高分辨率。另外,在CCD寄存器和输出电路之间设计了新的加速电极,达到了工作频率为20MHz的高速工作。
Developed high-speed high-resolution CCD line imaging devices TCD105C (3,648 bits) and TCD103C (2,592 bits). Such devices due to the small chip size, the photosensitive elements are high-density integrated together. The use of a P-well structure prevents the deterioration of signal isolation due to the higher density due to higher densification, thereby achieving a high resolution of 70% (Nyquist limit) in MTF. In addition, a new accelerating electrode has been designed between the CCD register and the output circuit to achieve high-speed operation at a working frequency of 20 MHz.