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运用ＸＰＳ法研究ＺｎＳ：Ｃｕ，Ｃｌ，Ｅｒ薄膜器件的界面态及所掺激活剂的纵向分布，认为氧吸附形成的ＺｎＳ薄膜的表面构态是产生薄膜界面态和界面陷阱能级的主要原因，对研究薄膜器件的激发过程有参考意义。
The XPS method was used to study the interface states of ZnS: Cu, Cl, Er thin film devices and the vertical distribution of activator. It is considered that the surface morphology of ZnS films formed by oxygen adsorption is the main reason for the interface states and interface trap levels. The research of thin film device excitation process has reference value.