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研究一种表面再构的具有全方位反光镜(ODR)结构的倒装AlGaInP半导体发光二极管(LED)。通过湿法腐蚀方法再构N-AlGaInP盖层表面,形成类金字塔的表面结构,使不同角度入射的光有更多的机会出射。比较了表面再构LED与常规LED的电、光学特性,在注入电流为20 mA时,经过表面再构LED的轴向光强和输出光功率是常规LED的1.5倍,表面再构后大大提高了LED的外量子效率,减少了LED内部热量的积累,提高了LED芯片的可靠性。
A surface reconstructed flip-chip AlGaInP semiconductor light-emitting diode (LED) with an omnidirectional reflector (ODR) structure was investigated. The surface of the N-AlGaInP cap layer is reconstructed by the wet etching method to form the pyramidal surface structure, which makes the light incident at different angles have more opportunities to emerge. Comparing the electrical and optical properties of the surface reconstructed LED with the conventional LED, the axial light intensity and the output optical power of the reconstructed LED through the surface recombination are 1.5 times higher than that of the conventional LED at the injection current of 20 mA, and the surface recombination greatly increases The external quantum efficiency of the LED reduces the heat accumulation inside the LED and improves the reliability of the LED chip.