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瑞萨近日推出了两个全新的超低功耗SRAM(超LP SRAM)系列——低功耗SRAM领域的领先产品,能够为工厂自动化(FA)、工业设备、智能电网等应用提供更出色的可靠性并延长备用电池的使用寿命。全新的16Mb RMLV1616A系列和32 Mb RMWV3216A系列采用110纳米制造工艺,融合了创新的存储单元技术,不仅大幅提升了可靠性,同时也有助于延长电池的工作时间。瑞萨的超LP SRAM的存储器单元采用其独有技术,抗软失效能力是传
Renesas Technology has introduced two new ultra-low-power SRAM (super-LP SRAM) families, the leading products in the field of low-power SRAM, to provide better performance for applications such as factory automation (FA), industrial equipment and smart grid Reliability and extend battery life. The new 16Mb RMLV1616A Series and 32Mb RMWV3216A Series utilize a 110nm manufacturing process that incorporates innovative memory cell technology to dramatically improve reliability while helping to extend battery life. Renesas ultra-low SRAM memory cells using its unique technology, anti-soft failure is passed