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首先把本征值方程投影到导带的子空间中,进而得到AlGaN/GaN量子阱中第一、二子带的Rashba自旋劈裂系数(α_1,α_2)和子带自自旋-轨道耦合系数η_(12).然后自恰求解薛定谔方程和泊松方程计算了不同栅压的量子阱中的α_1,α_2和η_(12),并分别讨论了量子阱阱层、左右异质结界面和垒层对它们的贡献.结果表明可以通过栅压来调节自旋-轨道耦合系数,子带间自旋轨道耦合系数η_(12)比Rashba自旋劈裂系数α_1,α_2小,但基本在同一数量级.
First, the eigenvalue equation is projected into the subspace of the conduction band, and then the Rashba spin-splitting coefficients (α_1, α_2) and the spin-orbit coupling coefficients of the subbands in the first and second sub-bands of AlGaN / (12). Then we calculate the α_1, α_2 and η_12 in the quantum well with different gate voltages by solving the Schrödinger equation and the Poisson’s equation, and discuss the quantum well layers, the left and right heterojunction interfaces and the barrier pairs The results show that the spin-orbit coupling coefficient can be adjusted by gate voltage, and the spin-orbit coupling coefficient η_ (12) between subbands is smaller than the Rashba spin-splitting coefficients α_1 and α_2, but they are basically the same order of magnitude.