论文部分内容阅读
A high precision high-order curvature-compensated bandgap reference compatible with the standard Bi-CMOS process,which uses a simple structure to realize a novel exponential curvature compensation in lower temperature ranges,and a piecewise curvature correction in higher temperature ranges,is presented.Experiment results of the proposed bandgap reference implemented with a 0.6-μm BCD process demonstrate that a temperature coefficient of 2.9 ppm/℃is realized at a 3.6-V power supply,a power supply rejection ratio of 85 dB is achieved,and the line regulation is better than 0.318 mV/V for 2.2-5 V supply voltage dissipating a maximum supply current of 45μA.The active area of the presented bandgap reference is 260×240μm~2.
A high precision high-order curvature-compensated bandgap reference compatible with the standard Bi-CMOS process, which uses a simple structure to realize a novel exponential curvature compensation in lower temperature ranges, and a piecewise curvature correction in higher temperature ranges, is presented. Experiment results of the proposed bandgap reference implemented with a 0.6-μm BCD process demonstrate that a temperature coefficient of 2.9 ppm / ℃ was realized at a 3.6-V power supply, a power supply rejection ratio of 85 dB is achieved, and the line regulation is better than 0.318 mV / V for 2.2-5 V supply voltage dissipating a maximum supply current of 45 μA. The active area of the presented band gap reference is 260 × 240 μm ~ 2.