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在常压下,用所建立的CVD系统——射频感应加热卧式反应室及N_2-SiH_4-N_2O气体系统,制备出掺氧半绝缘多晶硅(SIPOS )膜.利用俄歇能谱分析、透射电子显微镜等技术实验研究了膜的元素组分、晶粒尺寸、折射率、淀积达率以及与制备条件的关系;用掺氧SIPOS和低温淀积的用SiO_2双层介质取代热生长SiO_2,应用于高反压晶体管钝化,显著提高了击穿电压BV(ceo),并且改善了穿透电流I(ceo).
Under normal pressure, the oxygen-doped semi-insulating polysilicon (SIPOS) films were prepared by CVD system-RF induction heating horizontal reaction chamber and N_2-SiH_4-N_2O gas system.Using Auger spectroscopy, transmission electron Microscopy and other techniques experimental study of the film elemental composition, grain size, refractive index, the deposition rate and the relationship between the preparation conditions; with oxygen-doped SIPOS and low temperature deposition of SiO_2 double-layered medium instead of the thermal growth of SiO_2 application Passivation at high reverse voltage transistors significantly increases the breakdown voltage BV (ceo) and improves the breakthrough current I (ceo).