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本文介绍了一种新的退火技术——非相干光脉冲加热退火。它与激光退火技术相比,效率高,设备简单;与传统热退火相比,对离子注入杂质的激活率高,≈100％,不引起杂质再分布,且能有效地避免离子注入损伤层对重金属离子的收集,在超大规模集成电路工艺中有着多方面应用的可能性。作者应用这一退火技术于LPCVD非晶硅薄膜的再结晶研究。用RBS结合电子沟道技术研究了再结晶化的动力学过程。实验发现,在硅衬底上淀积的非晶硅薄膜(1600(?))能在600℃、35秒和700℃、15秒时间内完成再结晶化过程,结晶化结构属柱状。
This article describes a new annealing technique - incoherent optical pulse heating annealing. Compared with the laser annealing technology, it has the advantages of high efficiency and simple equipment. Compared with the conventional thermal annealing, the activation rate of ion implantation impurities is high, ≈100%, does not cause the redistribution of impurities, and can effectively prevent the ion implantation damage layer pairs The collection of heavy metal ions has the potential to be used in many ways in VLSI processes. The authors applied this annealing technique to the recrystallization of LPCVD amorphous silicon thin films. The kinetics of recrystallization was studied by RBS combined with electron channeling. It was found that the amorphous silicon film (1600 (?)) Deposited on the silicon substrate can complete the recrystallization within 600s, 35s, 700s and 15s, and the crystallized structure is columnar.