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对工作波长为1 310nm的大功率低噪声DFB激光芯片结构进行了优化设计。分别对具有相同非对称分别限制层(SCH)外延层的掩埋异质结构(BH)和脊波导结构(RWG)进行了建模仿真。计算结果表明:非对称SCH结构较对称SCH结构,可明显提高激光输出功率;相比于RWG结构,BH结构对载流子有更好的限制作用,从而降低相对强度噪声(RIN)。优化设计后的DFB激光器输出功率高达207mW@600mA,斜率效率为0.36W/A,边模抑制比为50dB,在1~30GHz范围内,激光器的相对强度噪声小于-160dB/Hz。
The working wavelength of 1 310nm high-power low-noise DFB laser chip structure has been optimized. The buried heterostructures (BHs) and the ridge waveguide structures (RWGs) with the same asymmetric Restriction Layer (SCH) epitaxial layers were modeled and simulated respectively. The calculated results show that asymmetric SCH structure can improve laser output power significantly compared with symmetrical SCH structure. Compared with RWG structure, BH structure can better limit the carriers and reduce the relative intensity noise (RIN). The optimized DFB laser output power is as high as 207mW @ 600mA with slope efficiency of 0.36W / A and side mode suppression ratio of 50dB. The relative intensity noise of the laser is less than -160dB / Hz in the range of 1 ~ 30GHz.