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采用纯ZrW2O8陶瓷靶材,以脉冲激光沉积法在石英基片上沉积并退火处理后制备了ZrW2O8薄膜。利用X射线衍射仪、X射线光电子能谱仪和扫描电子显微镜观察和确定了薄膜结构、化学组分和表面形貌,用划痕仪、表面粗糙轮廓仪测量了薄膜与基片之间的结合力和薄膜厚度。结果表明:脉冲激光沉积的薄膜为非晶态,膜层物质各元素之间的化学计量比与靶材成分一致;衬底未加热沉积的薄膜表面粗糙度较大,衬底温度为650℃时,薄膜表面平滑致密,粗糙度明显降低;非晶膜在1200℃密闭退火热处理3min后淬火得到立方相ZrW2O8薄膜,退火后的薄膜晶粒较大,同时还出现一些沿晶界和晶内的裂纹缺陷,随着退火温度升高,薄膜与基片的结合力降低。
The pure ZrW2O8 ceramic target was deposited on the quartz substrate by pulsed laser deposition and annealed to prepare the ZrW2O8 thin film. The structure, chemical composition and surface morphology of the films were observed and confirmed by X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscopy. The adhesion between the films and the substrate was measured with a scratch tester and a surface roughness profiler Force and film thickness. The results show that the films deposited by pulsed laser deposition are amorphous and the stoichiometry of each element in the film is consistent with the composition of the target. The surface roughness of the films deposited without heating is large. When the substrate temperature is 650 ℃ , The surface of the film is smooth and dense, and the roughness is obviously reduced. After the amorphous film is annealed at 1200 ℃ for 3min, the cubic ZrW2O8 film is quenched to obtain a larger film grain size after annealing, and some cracks along grain boundaries and crystals Defects, as the annealing temperature increases, the bonding force between the film and the substrate decreases.