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金属─绝缘体─金属（ＭＩＭ）电容是影响ＧａＡｓ微波单元集成电路（ＭＭＩＣ）成品率的主要原因之一，ＰＥＣＶＤ氮化硅膜又是影响ＭＩＭ电容质量和成品率的主要因素。本文通过实验和分析，提出了提高氯化硅膜质量和减少薄膜针孔的方法，结果大大提高了ＭＩＭ电容ＧａＡｓＭＭＩＣ的成品率，降低了ＧａＡｓＭＭＩＣ的成本。
Metal-insulator-metal (MIM) capacitors are one of the main factors that affect the yield of GaAs microwave integrated circuit (MMIC). PECVD silicon nitride film is the main factor that affects the MIM capacitor quality and yield. In this paper, the methods of improving the quality of silicon chloride film and reducing the pinholes of the film are proposed through experiments and analyzes. As a result, the yield of GaAsMMIC MIM capacitor is greatly improved and the cost of GaAsMMIC is reduced.