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本文利用了光调制光谱（ＰＲ），原位测量了ＧａＡｓ（００１）表面Ｓｉ－δ掺杂结构样品，研究了不同掺杂浓度对Ｓｉ－δ掺杂相关的光谱结构的影响，观察到了Ｓｉ－δ掺杂结构中，价带连续态到导带半Ｖ－形势阱中子带的跃迁，观察到该跃迁相随掺杂浓度增加先向高能移动，而后达到饱和．用简单的三角势模型，在理论上计算了面掺杂浓度２．４×１０１４ｃｍ－２时，半Ｖ－形势阱中子带的能级位置，波函数的分布及光吸收系数，与实验结果相一致．
In this paper, the optical modulation spectra (PR) were used to measure the Si-δ doped structures on the GaAs (001) surface in-situ. The effects of different doping concentrations on the spectral structures related to Si-δ doping were investigated. δ-doped structure, the transition from the valence band to the transition of the half-V-shaped potential well in the conduction band is observed, and the transition phase first moves towards high energy with the doping concentration increasing, and then reaches saturation. Using the simple triangular potential model, the energy level position, the distribution of wave function and the optical absorption coefficient of the neutron band in the semi-V-shaped potential well were theoretically calculated with the doping concentration of 2.4 × 1014cm-2. Compared with the experimental results Consistent.