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The post-silicide of dopant segregation process for adjusting NiSi/n-Si SBH(Schottky barrier height)is described.Adopting the analysis of the I–V characteristic curve and extrapolating the SBH of NiSi/n-Si Schottky junction diodes(NiSi/n-Si SJDs),the effects of different of process parameters dopant segregation,including segregation anneal temperature and dopant implant dose,on the properties of the NiSi/n-Si SJDs have been studied,and the corresponding mechanisms are discussed.
The post-silicide of dopant segregation process for adjusting NiSi / n-Si SBH (Schottky barrier height) is described. Adopting the analysis of the I-V characteristic curve and extrapolating the SBH of NiSi / n-Si Schottky junction diodes (NiSi / n-Si SJDs), the effects of different of process parameters dopant segregation, including segregation anneal temperature and dopant implant dose, on the properties of the NiSi / n-Si SJDs have been studied, and the corresponding mechanisms are discussed.