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利用同步辐射光电子能谱研究了ＣＨ３ＣＳＮＨ２钝化的ＧａＰ（１００）表面和稀土金属Ｇｄ淀积到Ｓ－ＧａＰ（１００）表面的界面形成，结果表明ＣＨ３ＣＳＮＨ２溶液对ＧａＰ（１００）表面具有钝化作用，形成了Ｇａ和Ｐ的硫化物钝化层，对钝化表面退火，Ｐ－Ｓ键逐渐消失，而仅仅留下了Ｇａ－Ｓ键．Ｇｄ淀积到硫钝化退火的ＧａＰ表面，Ｐ的扩散被有效地阻止，而Ｓ仍保持在界面处，Ｇｄ与表面的元素态Ｐ和二聚体Ｇａ反应，形成金属Ｇａ向淀积的Ｇｄ金属层扩散，导致金属Ｇａ在表面偏析．
The synchrotron radiation photoelectron spectroscopy was used to study the interface formation of the passivated GaP (100) surface and the rare earth metal Gd deposited on the S-GaP (100) surface. The results show that the passivation of CH3CSNH2 solution on the surface of GaP (100) The formation of Ga and P sulfide passivation layer, annealing the passivated surface, P-S bond gradually disappear, leaving only the Ga-S bond. Gd is deposited on the sulfur passivated GaP surface, the diffusion of P is effectively prevented and S remains at the interface. Gd reacts with the surface elemental P and dimer Ga to form a metal Ga toward the deposited Gd The metal layer diffuses, causing the metal Ga to segregate on the surface.