论文部分内容阅读
2N6483是性能优良的结型场效应对管,常用作高阻抗红外探测器前置放大器的输入级,并且经常和探测器一起被冷却。本文将介绍该管子在50K—295K温度范围内,其主要电气参数:如栅极转移特性、跨导、漏源饱和电流、输入失调电压以及等效输入噪声电压等随温度变化的实验研究结果,这对于挑选低温下使用的场效应管并使之工作在最佳条件下将是很有参考价值的。
The 2N6483 is a high performance junction field effect transistor that is commonly used as the input stage for high impedance infrared detector preamplifiers and is often cooled with the detector. This article will introduce the tube in the temperature range of 50K-295K, the main electrical parameters: such as gate transfer characteristics, transconductance, drain-source saturation current, input offset voltage and equivalent input noise voltage with temperature experimental results, This is very useful for the selection of the FET used at low temperature and to make it work under the best conditions.