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The nonlinear photoresponse to a 1.56-μm infrared continuous wave laser in semi-insulating(SI) galliumarsenide(GaAs) is examined. The double-frequency absorption(DFA) is responsible for the nonlinear photoresponse based on the quadratic dependence of the photocurrent separately on the coupled optical power and bias voltage. The electric feld-induced DFA remarkably afects the native DFA in SI GaAs. The surface electric feld or the surface band-bending of SI GaAs signifcantly afects the magnitude variation of the photocurrent and dark current.
The double-frequency absorption (DFA) is responsible for the nonlinear response on a quadratic dependence of the photocurrent separately on the coupled electric power and bias voltage. The electric feld-induced DFA remarkably a feels the native DFA in SI GaAs. The surface electric feld or the surface band-bending of SI GaAs signifcantly afects the magnitude variation of the photocurrent and dark current.