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研究了全耗尽SOI、部分耗尽SOI和体硅NMOS器件中源、漏、栅和衬底电流的非准静态现象。研究表明,在相同的结构参数下,体硅器件的非准静态效应最强,PDSOI次之,FDSOI最弱。指出了沟道源、漏端反型时间和反型程度的不同是造成非准静态效应的内在原因。最后提出临界升压时间的概念,以此对非准静态效应进行定量表征,深入研究器件结构参数对非准静态效应的影响规律。结果显示,通过缩短沟道长度、降低沟道掺杂浓度、减小硅膜厚度和栅氧厚度、提高埋氧层厚度等手段,可以弱化SOI射频MOS器件中的非准静态效应。
The quasi-static phenomena of source, drain, gate and substrate currents in fully depleted SOI, partially depleted SOI, and bulk silicon NMOS devices were investigated. The results show that under the same structural parameters, bulk silicon devices have the highest non-quasi-static effect, followed by PDSOI, and FDSOI the weakest. It is pointed out that the difference of channel source and drain inversion time and inversion is the intrinsic reason of non-quasi-static effect. Finally, the concept of critical step-up time is proposed to quantitatively characterize the non-quasi-static effect and to study the influence of device structure parameters on the non-quasi-static effect. The results show that the non-quasi-static effect in SOI RF MOS devices can be weakened by shortening the channel length, decreasing the channel doping concentration, reducing the thickness of the silicon film and the gate oxide thickness, and increasing the thickness of the buried oxide layer.