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研究了GaN基HEMT器件表面电荷和体陷阱的变化对输出特性的影响.通过分析表面电荷与体陷阱对电流坍塌效应、饱和电流和膝点电压的影响,初步确定了其变化关系.研究结果显示表面电荷的增加能够耗尽二维电子气,减弱电流坍塌效应,降低饱和电流,使膝点电压非正常后移.同时,体陷阱的减小可以有效减弱电流坍塌效应,增大饱和电流,且膝点电压基本保持不变.晶格温度较低时,热电子效应和量子隧穿效应对电流坍塌效应影响显著.采用流体动力学模型,分析了引起电流坍塌效应的内在物理机制,并获得了器件设计和制备的优化方案.
The influence of surface charges and body traps on the output characteristics of GaN-based HEMT devices was investigated. The relationship between the surface charge and the body traps on the current collapse effect, the saturation current and the knee voltage was analyzed. The results show that The increase of the surface charge can deplete two-dimensional electron gas, weaken the current collapse effect, reduce the saturation current, and make the knee voltage abnormally move backward. Meanwhile, the reduction of the body trap can effectively reduce the current collapse effect and increase the saturation current Knee voltage basically remained unchanged.When the lattice temperature is low, the thermoelectron effect and the quantum tunneling effect have a significant impact on the current collapse effect.Using the fluid dynamics model, the intrinsic physical mechanism that causes the current collapse effect is analyzed and obtained Device design and preparation of the optimization program.