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应用射频反应磁控溅射的方法,将ZnO薄膜沉积于高磷掺杂的n+型Si衬底上。在沉积和后退火过程中,磷向ZnO薄膜扩散并被激活,使ZnO薄膜由n型转化为p型,从而形成p型ZnO薄膜。X射线衍射分析(XRD)证明了所制备的ZnO薄膜都是高c轴取向的六角纤锌矿结构的薄膜。电学I-V关系曲线的整流特性和空穴浓度≥1.78×1018/cm3的霍耳效应测试结果证明了p型ZnO薄膜的形成。
Using RF reactive magnetron sputtering method, the ZnO thin film is deposited on the high phosphorus doped n + type Si substrate. During deposition and post-annealing, phosphorus diffuses to the ZnO film and is activated, causing the ZnO film to be converted from n-type to p-type, thereby forming a p-type ZnO film. X-ray diffraction analysis (XRD) proved that the prepared ZnO films are all hexagonal wurtzite films with high c-axis orientation. The rectifying characteristics of the electrical I-V curve and the Hall effect test of the hole concentration ≥1.78 × 1018 / cm3 prove the formation of the p-type ZnO thin film.