论文部分内容阅读
为了适应我国半导体器件及大规模集成电路工业的发展,研制一台供微控中流离子注入机使用的气固两用Freeman离子源。~(11)B~+束流达1.5mA,离子比大于40％。
In order to meet the development of China’s semiconductor devices and large-scale integrated circuit industry, a gas-solid dual-purpose Freeman ion source for micro-control medium-ion implanter was developed. ~ (11) B ~ + beam current of 1.5mA, ion ratio greater than 40%.