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主要研究负栅压偏置不稳定性(negative bias temperature instability,NBTI)效应中的自愈合效应,研究了器件阈值电压随着恢复时间和应力时间的恢复规律.研究表明器件的退化可以恢复是由于NBTI应力后界面态被氢钝化.
The research focuses on the self-healing effect of the negative bias temperature instability (NBTI) effect, and studies the recovery law of the device threshold voltage with the recovery time and the stress time.The results show that the device degradation can be recovered The interface state is hydrogen passivated after NBTI stress.